Lithographic apparatus and device manufacturing method

ABSTRACT

An immersion lithographic apparatus is provided with a liquid confinement structure which defines at least in part a space configured to contain liquid between the projection system and the substrate. In order to reduce the crossing of the edge of the substrate which is being imaged (which can lead to inclusion of bubbles in the immersion liquid), the cross-sectional area of the space in a plane parallel to the substrate is made as small as possible. The smallest theoretical size is the size of the target portion which is imaged by the projection system. In an embodiment, the shape of a final element of the projection system is also changed to have a similar size and/or shape in a cross-section parallel to the substrate to that of the target portion.

This application is a continuation application of co-pending U.S. patentapplication Ser. No. 14/484,076, filed Sep. 11, 2014, which is acontinuation application of U.S. patent application Ser. No. 13/589,841,filed Aug. 20, 2012, now U.S. Pat. No. 8,860,924, which is acontinuation application of U.S. patent application Ser. No. 11/120,186,filed May 3, 2005, now U.S. Pat. No. 8,248,577, the contents of each ofthe foregoing application is hereby incorporated in its entirety byreference.

FIELD

The invention relates to a lithographic apparatus and a method formanufacturing a device.

BACKGROUND

A lithographic apparatus is a machine that applies a desired patternonto a substrate, usually onto a target portion of the substrate. Alithographic apparatus can be used, for example, in the manufacture ofintegrated circuits (ICs). In that instance, a patterning device, whichis alternatively referred to as a mask or a reticle, may be used togenerate a circuit pattern to be formed on an individual layer of theIC. This pattern can be transferred onto a target portion (e.g.comprising part of, one, or several dies) on a substrate (e.g. a siliconwafer). Transfer of the pattern is typically via imaging onto a layer ofradiation-sensitive material (resist) provided on the substrate. Ingeneral, a single substrate will contain a network of adjacent targetportions that are successively patterned. Known lithographic apparatusinclude so-called steppers, in which each target portion is irradiatedby exposing an entire pattern onto the target portion at one time, andso-called scanners, in which each target portion is irradiated byscanning the pattern through a radiation beam in a given direction (the“scanning”-direction) while synchronously scanning the substrateparallel or anti-parallel to this direction. It is also possible totransfer the pattern from the patterning device to the substrate byimprinting the pattern onto the substrate

It has been proposed to immerse the substrate in the lithographicprojection apparatus in a liquid having a relatively high refractiveindex, e.g. water, so as to fill a space between the final element(e.g., a lens, another optical element, or other structure) of theprojection system and the substrate. The point of this is to enableimaging of smaller features since the exposure radiation will have ashorter wavelength in the liquid. (The effect of the liquid may also beregarded as increasing the effective NA of the system and alsoincreasing the depth of focus.) Other immersion liquids have beenproposed, including water with solid particles (e.g. quartz) suspendedtherein.

However, submersing the substrate or substrate and substrate table in abath of liquid (see, for example, U.S. Pat. No. 4,509,852, herebyincorporated in its entirety by reference) means that there is a largebody of liquid that must be accelerated during a scanning exposure. Thisrequires additional or more powerful motors and turbulence in the liquidmay lead to undesirable and unpredictable effects.

One of the solutions proposed is for a liquid supply system to provideliquid on only a localized area of the substrate and in between thefinal element of the projection system and the substrate using a liquidconfinement system (the substrate generally has a larger surface areathan the final element of the projection system). One way which has beenproposed to arrange for this is disclosed in PCT patent applicationpublication no. WO 99/49504, hereby incorporated in its entirety byreference. As illustrated in FIGS. 2 and 3, liquid is supplied by atleast one inlet IN onto the substrate, preferably along the direction ofmovement of the substrate relative to the final element, and is removedby at least one outlet OUT after having passed under the projectionsystem. That is, as the substrate is scanned beneath the element in a −Xdirection, liquid is supplied at the +X side of the element and taken upat the −X side. FIG. 2 shows the arrangement schematically in whichliquid is supplied via inlet IN and is taken up on the other side of theelement by outlet OUT which is connected to a low pressure source. Inthe illustration of FIG. 2 the liquid is supplied along the direction ofmovement of the substrate relative to the final element, though thisdoes not need to be the case. Various orientations and numbers of in-and out-lets positioned around the final element are possible, oneexample is illustrated in FIG. 3 in which four sets of an inlet with anoutlet on either side are provided in a regular pattern around the finalelement.

SUMMARY

The presence of bubbles in the immersion liquid of an immersionlithography apparatus may deleteriously affect the imaging quality andevaporation of immersion liquid from the substrate which can lead tooverlay errors, problems with focus control and drying stains.

Accordingly, it would be advantageous, for example, to reduce bubbleformation in and evaporation of the immersion liquid.

According to an aspect of the invention, there is provided alithographic apparatus comprising:

a substrate table constructed to hold a substrate; and

a projection system configured to project a patterned radiation beamonto a target portion of the substrate and having an element immediatelyadjacent the substrate, the element having a cross-sectional shape in aplane substantially parallel to the substrate which is rectilinear.

According to an aspect of the invention, there is provided alithographic apparatus, comprising:

a substrate table constructed to hold a substrate;

a projection system configured to project a patterned radiation beamonto a target portion of the substrate; and

a liquid confinement structure having a surface defining at least inpart a space configured to contain liquid between the projection systemand the substrate, wherein in a plane substantially parallel to thesubstrate, at a position closest to the substrate, the space has across-section which substantially conforms in shape, area, or both tothat of the target portion.

According to an aspect of the invention, there is provided alithographic apparatus, comprising:

a substrate table constructed to hold a substrate;

a projection system configured to project a patterned radiation beamonto a target portion of the substrate; and

a liquid confinement structure having a surface defining at least inpart a space configured to contain liquid between the substrate and anelement of the projection system immediately adjacent the substrate,wherein in a plane substantially parallel to the substrate an area, ashape, or both of the cross-section of the element, of the space, orboth, substantially conform(s) to that of the target portion.

According to an aspect of the invention, there is provided a devicemanufacturing method comprising using a projection system to project ona target portion of a substrate a patterned beam of radiation, whereinan element of the projection system immediately adjacent the substratehas a cross-sectional shape in a plane substantially parallel to thesubstrate which is rectilinear.

According to an aspect of the invention, there is provided a devicemanufacturing method comprising using a projection system to project ona target portion of a substrate a patterned beam of radiation, wherein aspace configured to be filled with liquid between the projection systemand the substrate is defined at least in part by a surface of a liquidconfinement structure and wherein in a plane substantially parallel tothe substrate at a position closest to the substrate the space has across-section which substantially conforms in shape, area, or both tothat of the target portion.

According to an aspect of the invention, there is provided a devicemanufacturing method comprising using a projection system to project ona target portion of a substrate a patterned beam of radiation, wherein aliquid is provided in a space between the projection system and thesubstrate and which space is defined at least in part by a surface of aliquid confinement structure and the space, an element of the projectionsystem immediately adjacent the substrate, or both, has a cross-sectionin a plane substantially parallel to the substrate which conformsclosely in size, shape, or both to that of the target portion.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the invention will now be described, by way of exampleonly, with reference to the accompanying schematic drawings in whichcorresponding reference symbols indicate corresponding parts, and inwhich:

FIG. 1 depicts a lithographic apparatus according to an embodiment ofthe invention;

FIGS. 2 and 3 depict a liquid supply system for use in a lithographicprojection apparatus;

FIG. 4 depicts another liquid supply system for use in a lithographicprojection apparatus;

FIG. 5 depicts a further liquid supply system for use in a lithographicprojection apparatus;

FIG. 6 depicts schematically in plan a space of a liquid confinementstructure in accordance with an embodiment of the invention;

FIG. 7 depicts schematically in plan a space of another liquidconfinement structure in accordance with an embodiment of the invention;

FIG. 8 depicts in cross-section a liquid confinement structure and afinal element of the projection system according to the invention;

FIG. 9 depicts in cross-section a final element of the projectionsystem;

FIG. 10 depicts schematically the final element of FIG. 9; and

FIG. 11 depicts a lithographic apparatus according to an embodiment ofthe invention.

DETAILED DESCRIPTION

FIG. 1 schematically depicts a lithographic apparatus according to oneembodiment of the invention. The apparatus comprises:

-   -   an illumination system (illuminator) IL configured to condition        a radiation beam B (e.g. UV radiation or DUV radiation).    -   a support structure (e.g. a mask table) MT constructed to        support a patterning device (e.g. a mask) MA and connected to a        first positioner PM configured to accurately position the        patterning device in accordance with certain parameters;    -   a substrate table (e.g. a wafer table) WT constructed to hold a        substrate (e.g. a resist-coated wafer) W and connected to a        second positioner PW configured to accurately position the        substrate in accordance with certain parameters; and    -   a projection system (e.g. a refractive projection lens system)        PS configured to project a pattern imparted to the radiation        beam B by patterning device MA onto a target portion C (e.g.        comprising one or more dies) of the substrate W.

The illumination system may include various types of optical components,such as refractive, reflective, magnetic, electromagnetic, electrostaticor other types of optical components, or any combination thereof, fordirecting, shaping, or controlling radiation.

The support structure holds the patterning device in a manner thatdepends on the orientation of the patterning device, the design of thelithographic apparatus, and other conditions, such as for examplewhether or not the patterning device is held in a vacuum environment.The support structure can use mechanical, vacuum, electrostatic or otherclamping techniques to hold the patterning device. The support structuremay be a frame or a table, for example, which may be fixed or movable asrequired. The support structure may ensure that the patterning device isat a desired position, for example with respect to the projectionsystem. Any use of the terms “reticle” or “mask” herein may beconsidered synonymous with the more general term “patterning device.”

The term “patterning device” used herein should be broadly interpretedas referring to any device that can be used to impart a radiation beamwith a pattern in its cross-section such as to create a pattern in atarget portion of the substrate. It should be noted that the patternimparted to the radiation beam may not exactly correspond to the desiredpattern in the target portion of the substrate, for example if thepattern includes phase-shifting features or so called assist features.Generally, the pattern imparted to the radiation beam will correspond toa particular functional layer in a device being created in the targetportion, such as an integrated circuit.

The patterning device may be transmissive or reflective. Examples ofpatterning devices include masks, programmable mirror arrays, andprogrammable LCD panels. Masks are well known in lithography, andinclude mask types such as binary, alternating phase-shift, andattenuated phase-shift, as well as various hybrid mask types. An exampleof a programmable mirror array employs a matrix arrangement of smallmirrors, each of which can be individually tilted so as to reflect anincoming radiation beam in different directions. The tilted mirrorsimpart a pattern in a radiation beam which is reflected by the mirrormatrix.

The term “projection system” used herein should be broadly interpretedas encompassing any type of projection system, including refractive,reflective, catadioptric, magnetic, electromagnetic and electrostaticoptical systems, or any combination thereof, as appropriate for theexposure radiation being used, or for other factors such as the use ofan immersion liquid or the use of a vacuum. Any use of the term“projection lens” herein may be considered as synonymous with the moregeneral term “projection system”.

As here depicted, the apparatus is of a transmissive type (e.g.employing a transmissive mask). Alternatively, the apparatus may be of areflective type (e.g. employing a programmable mirror array of a type asreferred to above, or employing a reflective mask).

The lithographic apparatus may be of a type having two (dual stage) ormore substrate tables (and/or two or more mask tables). In such“multiple stage” machines the additional tables may be used in parallel,or preparatory steps may be carried out on one or more tables while oneor more other tables are being used for exposure.

Referring to FIG. 1, the illuminator IL receives a radiation beam from aradiation source SO. The source and the lithographic apparatus may beseparate entities, for example when the source is an excimer laser. Insuch cases, the source is not considered to form part of thelithographic apparatus and the radiation beam is passed from the sourceSO to the illuminator IL with the aid of a beam delivery system BDcomprising, for example, suitable directing mirrors and/or a beamexpander. In other cases the source may be an integral part of thelithographic apparatus, for example when the source is a mercury lamp.The source SO and the illuminator IL, together with the beam deliverysystem BD if required, may be referred to as a radiation system.

The illuminator IL may comprise an adjuster AD for adjusting the angularintensity distribution of the radiation beam. Generally, at least theouter and/or inner radial extent (commonly referred to as σ-outer andσ-inner, respectively) of the intensity distribution in a pupil plane ofthe illuminator can be adjusted. In addition, the illuminator IL maycomprise various other components, such as an integrator IN and acondenser CO. The illuminator may be used to condition the radiationbeam, to have a desired uniformity and intensity distribution in itscross-section.

The radiation beam B is incident on the patterning device (e.g., maskMA), which is held on the support structure (e.g., mask table MT), andis patterned by the patterning device. Having traversed the mask MA, theradiation beam B passes through the projection system PS, which focusesthe beam onto a target portion C of the substrate W. With the aid of thesecond positioner PW and position sensor IF (e.g. an interferometricdevice, linear encoder or capacitive sensor), the substrate table WT canbe moved accurately, e.g. so as to position different target portions Cin the path of the radiation beam B. Similarly, the first positioner PMand another position sensor (which is not explicitly depicted in FIG. 1)can be used to accurately position the mask MA with respect to the pathof the radiation beam B, e.g. after mechanical retrieval from a masklibrary, or during a scan. In general, movement of the mask table MT maybe realized with the aid of a long-stroke module (coarse positioning)and a short-stroke module (fine positioning), which form part of thefirst positioner PM. Similarly, movement of the substrate table WT maybe realized using a long-stroke module and a short-stroke module, whichform part of the second positioner PW. In the case of a stepper (asopposed to a scanner) the mask table MT may be connected to ashort-stroke actuator only, or may be fixed. Mask MA and substrate W maybe aligned using mask alignment marks M1, M2 and substrate alignmentmarks P1, P2. Although the substrate alignment marks as illustratedoccupy dedicated target portions, they may be located in spaces betweentarget portions (these are known as scribe-lane alignment marks).Similarly, in situations in which more than one die is provided on themask MA, the mask alignment marks may be located between the dies.

The depicted apparatus could be used in at least one of the followingmodes:

1. In step mode, the mask table MT and the substrate table WT are keptessentially stationary, while an entire pattern imparted to theradiation beam is projected onto a target portion C at one time (i.e. asingle static exposure). The substrate table WT is then shifted in the Xand/or Y direction so that a different target portion C can be exposed.In step mode, the maximum size of the exposure field limits the size ofthe target portion C imaged in a single static exposure.

2. In scan mode, the mask table MT and the substrate table WT arescanned synchronously while a pattern imparted to the radiation beam isprojected onto a target portion C (i.e. a single dynamic exposure). Thevelocity and direction of the substrate table WT relative to the masktable MT may be determined by the (de-) magnification and image reversalcharacteristics of the projection system PS. In scan mode, the maximumsize of the exposure field limits the width (in the non-scanningdirection) of the target portion in a single dynamic exposure, whereasthe length of the scanning motion determines the height (in the scanningdirection) of the target portion.

3. In another mode, the mask table MT is kept essentially stationaryholding a programmable patterning device, and the substrate table WT ismoved or scanned while a pattern imparted to the radiation beam isprojected onto a target portion C. In this mode, generally a pulsedradiation source is employed and the programmable patterning device isupdated as required after each movement of the substrate table WT or inbetween successive radiation pulses during a scan. This mode ofoperation can be readily applied to maskless lithography that utilizesprogrammable patterning device, such as a programmable mirror array of atype as referred to above.

Combinations and/or variations on the above described modes of use orentirely different modes of use may also be employed.

A further immersion lithography solution with a localized liquid supplysystem is shown in FIG. 4. Liquid is supplied by two groove inlets IN oneither side of the projection system PL and is removed by a plurality ofdiscrete outlets OUT arranged radially outwardly of the inlets IN. Theinlets IN and OUT can be arranged in a plate with a hole in its centerand through which the projection beam is projected. Liquid is suppliedby one groove inlet IN on one side of the projection system PL andremoved by a plurality of discrete outlets OUT on the other side of theprojection system PL, causing a flow of a thin film of liquid betweenthe projection system PL and the substrate W. The choice of whichcombination of inlet IN and outlets OUT to use can depend on thedirection of movement of the substrate W (the other combination of inletIN and outlets OUT being inactive).

Another immersion lithography solution with a localized liquid supplysystem solution which has been proposed is to provide the liquid supplysystem with a liquid confinement structure which extends along at leasta part of a boundary of the space between the final element of theprojection system and the substrate table. Such a solution isillustrated in FIG. 5. The liquid confinement structure is substantiallystationary relative to the projection system in the XY plane thoughthere may be some relative movement in the Z direction (in the directionof the optical axis). In an embodiment, a seal is formed between theliquid confinement structure and the surface of the substrate. In anembodiment, the seal is a contactless seal such as a gas seal. Such asystem is disclosed in United States patent application publication no.US 2004-0207824 and European patent application publication no. EP1420298, each hereby incorporated in its entirety by reference, andillustrated in FIG. 5.

The size and shape of the target portion C (which is sometimes referredto as the slit size) can be determined by the illumination optics, suchas a quartz rod which is a light mixer and/or a masking unit which ispositioned near to the exit of this rod

Bubbles may be formed in the immersion liquid due to movement of thesubstrate W and substrate table WT beneath the projection system PL andthe substantially stationary liquid confinement system such as thatillustrated in FIG. 4 or FIG. 5. In particular, when an edge of thesubstrate W passes under the space occupied by immersion liquid 11,bubbles may be formed in the immersion liquid and thereby reduce theimaging quality of the apparatus

Liquid confinement systems have been typically designed for use withconventional projection systems PL. In such systems, the last elementtends to have a circular cross-section in a plane substantiallyperpendicular to the optical axis of the projection system (which is thesame as a plane substantially parallel to the substrate W). In order forthe liquid confinement systems to operate, the cross-sectional area ofthe space filled with liquid closely conforms to the shape of the finalelement of the projection system in one and the same plane. This isdesigned to be the case to maximize the available space for the liquidsupply system which requires many components in a small volume. Severaldifferent designs of liquid confinement system have been proposed. Oneor more embodiments of the invention are applicable to all of thosedifferent designs including but not limited to those disclosed in UnitedStates patent publication no. US 2004-0263809, PCT patent applicationpublication no. WO 2004-090634, European patent application publicationnos. EP 1420298, EP 1494079, and EP 1477856, and U.S. patent applicationSer. No. 11/098,615, filed 5 Apr. 2005, the contents of each of whichare incorporated in their entirety herein by reference

The liquid confinement structure illustrated in FIG. 5 is now describedin detail. However, one or more embodiments of the invention are notlimited in application to this type of liquid confinement structure

FIG. 5 shows a liquid reservoir or space 10 between the projectionsystem and the substrate stage. The space 10 is filled with a liquid 11having a relatively high refractive index, e.g. water, provided viainlet/outlet ducts 13. The liquid has the effect that the radiation ofthe projection beam has a shorter wavelength in the liquid than in airor a vacuum, allowing smaller features to be resolved. It is well knownthat the resolution limit of a projection system is determined, interalia, by the wavelength of the projection beam and the numericalaperture of the system. The presence of the liquid may also be regardedas increasing the effective numerical aperture. Furthermore, at fixednumerical aperture, the liquid is effective to increase the depth offield

A contactless seal to the substrate around the image field of theprojection system is formal so that liquid is confined in the space 10between the substrate surface and the final element of the projectionsystem. The space is formed or defined by a liquid confinement structure12 positioned below and surrounding the final element of the projectionsystem PL. Liquid is brought into the space 10 below the projectionsystem and within the liquid confinement structure 12. The liquidconfinement structure 12 extends a little above the final element of theprojection system and the liquid level rises above the final element sothat a buffer of liquid is provided. The liquid confinement structure 12has an inner periphery that at the upper end, in an embodiment, closelyconforms to the step of the projection system or the final elementthereof and may, e.g., be round

The liquid is confined in the space 10 by a gas seal 16 between thebottom of the liquid confinement structure 12 and the surface of thesubstrate W. The gas seal is formed by gas, e.g. air, synthetic air, N₂or an inert gas, provided under pressure via inlet 15 to the gap betweenliquid confinement structure 12 and substrate and extracted via firstoutlet 14. The overpressure on the gas inlet 15, vacuum level on thefirst outlet 14 and geometry of the gap are arranged so that there is ahigh-velocity gas flow inwards that confines the liquid

Other types of liquid confinement structure 12 may be used. For example,the gas seal may be replaced by a combination of a single phaseextractor, a recess and a gas knife as is described in U.S. patentapplication Ser. No. 11/098,615, filed 5 Apr. 2005, hereby incorporatedin its entirety by reference herein. Alternatively, a gas seal may bereplaced by a hydrostatic or hydrodynamic bearing as is described inU.S. patent application publication no. US 2005-018155, each of whichare hereby incorporated in their entirety by reference

In order to reduce or minimize the amount of time which the space 10occupied by liquid spends over an edge of the substrate W duringscanning and to reduce or minimize the area of the top surface of thesubstrate from which immersion liquid may evaporate, the cross-sectionof the space 10 in a plane parallel to the top surface of the substrateW at a position closest to the substrate, is fashioned to conformclosely to the shape of the target portion TP (sometimes referred to asthe illumination slit area). This is illustrated in FIG. 6. As can beseen from FIG. 6, which is an illustration of the liquid confinementstructure 12 in plan, the space 10 is defined by walls 20 extendingbetween a lower opening 40 of the space 10 in the lower surface of theliquid confinement structure 12 and an upper opening 60 in the uppersurface of the liquid confinement structure 12. In FIG. 6, the upperopening 60 is circular such that the liquid confinement structure 12 maybe used with a conventional projection system PL in which the finalelement of the projection system is radially symmetric and the bottomopening 40 which is closest to the substrate W is rectangular andconforms in shape closely to the shape of the target portion TP.Furthermore, the lower opening 40 also closely conforms in size to thatof the target portion TP though of course it cannot be smaller than thetarget portion TP. In an embodiment, the area of the lower opening 40 orof the cross-section of the space in a plane substantially parallel tothe substrate W at a position closest to the substrate W is less than1.5 times the area of the target portion TP, in an embodiment less than1.4, 1.3, 1.2 or 1.1 times the area of the target portion TP. Thisdifference is to account for relative movement of the liquid supplysystem to the final element either in the case of ‘play’ or so that themovement can be deliberately carried out

The surface 20 of the liquid confinement structure 12 which defines thespace 10 in which the liquid is confined is shaped to transfer smoothlyfrom the shape of the upper opening 60 to the lower opening 40 andaccommodates the shape of the final element of the projection system andallows some relative movement of the confinement system as is describedin European patent application publication no. EP 1477856, the contentsof which is hereby incorporated in its entirety by reference. However,such a transfer can result in difficulties in the flow conditions andso, in an embodiment, the shapes of the upper and lower openings, 40, 60are similar, at least both rectilinear. This is particularly easy toarrange for if the projection system is close to the substrate. Thefurther the projection system is from the substrate the more circularthe projection system bottom needs to be because of the greater angles(there tend to be more pupil shapes). A rectilinear situation isillustrated in FIG. 7 in which the upper opening 60 is square and thelower opening 40 is rectangular. In this arrangement, it should be easyto achieve parallel flow of immersion liquid across the target portionTP without re-circulation of immersion liquid. Re-circulation ofimmersion liquid is to be avoided because re-circulated immersion liquidmay be heated up by the projection beam PB more than non-re-circulatedimmersion liquid and the variation in temperature can lead to variationsin refractive index of the immersion liquid in the space

If the size of the lower opening 40 of the space in the liquidconfinement structure 12 is reduced or minimized as is illustrated inFIGS. 6 and 7 by making its cross-sectional shape and/or size conformclosely or be similar to that of the target portion TP, during scanningof a whole substrate W the number of scans in which the opening 40passes over an edge of the substrate is greatly reduced. Thus, theopportunity for bubble formation in the immersion liquid in the space 10due to passing over of the edge of the substrate is reduced and so isthe area from which immersion liquid can evaporate

FIGS. 8-10 illustrate an embodiment of the invention in which both thefinal element of the projection system and the liquid confinementstructure 12 are optimized in shape and geometry so that the size of thelower opening 40 can be made to closely conform to the shape and/or sizeof the target portion TP without deleteriously affecting other operatingconditions such as the ability to generate parallel flow of immersionliquid across the target portion TP or reducing the available volume forthe liquid supply system. Indeed, this embodiment may increase availablevolume for the liquid supply system over prior systems

In FIG. 8, a liquid confinement structure 12 similar to that illustratedin FIG. 7 is used. Thus, the lower opening 40 of the space is of asimilar shape and dimension to the target portion TP in a plane PL₂which is substantially parallel to the substrate W and adjacent thesubstrate W, e.g., at a position closest to the substrate W. As isillustrated, the liquid confinement structure 12 partly surrounds thefinal element of the projection system PL. Thus, a plane PL₁ existswhich is substantially parallel to the plane of the top surface of thesubstrate W and also intersects both the space 10 defined by the liquidconfinement structure 12 and the lower end of the final element of theprojection system PL. In this plane, the cross-sectional shape and sizeof the space is similar to that of the cross-sectional shape and size ofthe final element of the projection system PL. Thus, in contrast to thefinal element of the projection system which would be used with theliquid confinement structure 12 of FIG. 6, the final element of theprojection system PL is shaped such that it also has a rectangular orsquare cross-section in that plane so that it is possible for the innersurface of the liquid confinement structure 12 which defines the spaceto transfer in shape from the lower opening 40 to the upper opening 60without needing to convert straight lines to curved lines. This helps inthe establishment of parallel flow of immersion liquid across the targetportion TP and simplifies the shaping of walls 20. As the distancebetween the projection system and the substrate increases, theimportance of a homogeneous immersion liquid increases so that parallelflow is even more desirable. The walls 20 are all substantially flat. Inan embodiment, the shape of the lower opening and upper opening, andthereby the shape of the cross-section of the final element of theprojection system PL, are similar to the shape of the target portion

In FIG. 8, a space 10 is illustrated which has a cross-section in aplane substantially parallel to the substrate W which decreases as thesubstrate W is approached. This need not necessarily be the case and itmay be that the upper and lower openings 40, 60 are the same orsubstantially the same size so that the side walls of the space definedby the liquid confinement structure 12 are parallel in cross-section. Asis illustrated in FIG. 8, the rate of increase/decrease incross-sectional area as the substrate W is left/approached is notnecessarily constant and a space 10 with two gradients of inner sidewall 20 is provided, a steep gradient between the substrate 20 andsubstantially the bottom of the projection system and another shallowergradient above that

FIG. 9 illustrates a final element of the projection system. The dottedlines show the shape of a typical final element of a projection systemand it can be seen that those parts of the final element can be removedwithout affecting the optical properties of the final element in use.Machining away the areas shown in dotted lines is one way ofmanufacturing such an element. Thus, the bottom surface of the finalelement is a shape to which the space of the liquid confinementstructure 12 can be closely formed without the need to use a curvedupper opening 60. The very bottom of the final element is illustrated ashaving a coating 100 applied to it (or a quartz plate or so-calledabslussplatte 100). The coating or quartz plate 100 is shown as beingflat. However, this need not be the case and the very bottom surface ofthe final element may be curved and may or may not have a coating orquartz plate applied to it

FIG. 10 is a three dimensional illustration of the final element of theprojection system in which the transition from a curved upper surface toa non-curved lower surface is clearly seen. The top half of the elementis normally shaped and it is the bottom half of the element which hasflat sides joined by straight edges 70 i.e. has a rectilinearcross-sectional shape in a plane substantially parallel to the substrateW

An embodiment of the invention is also applicable to off axis projectionsystems in which projection bean is arranged such that the targetportion is not, in plan, centered under the middle of the projectionsystem. An example embodiment of this arrangement is depict in FIG. 11.

In European patent application publication no. EP 1420300 and UnitedStates patent application publication no. US 2004-0136494, each herebyincorporated in their entirety by reference, the idea of a twin or dualstage immersion lithography apparatus is disclosed. Such an apparatus isprovided with two tables for supporting a substrate. Levelingmeasurements are carried out with a table at a first position, withoutimmersion liquid, and exposure is carried out with a table at a secondposition, where immersion liquid is present. Alternatively, theapparatus has only one table.

In an embodiment, there is provided a lithographic apparatus comprising:a substrate table constructed to hold a substrate; and a projectionsystem configured to project a patterned radiation beam onto a targetportion of the substrate and having an element immediately adjacent thesubstrate, the element having a cross-sectional shape in a planesubstantially parallel to the substrate which is rectilinear.

In an embodiment, the cross-sectional shape is similar to the shape ofthe target portion. In an embodiment, a bottom surface closest to thesubstrate of the element is curved. In an embodiment, the target portionis substantially rectangular. In an embodiment, the cross-sectionalshape of the element in a plane substantially parallel to the substratehas an area which is less than 1.5 times the area of the target portion.In an embodiment, the apparatus further comprises a liquid confinementstructure having a surface at least in part defining a space configuredto contain a liquid between the projection system and the substrate,wherein in a plane substantially parallel to the substrate the space hasa cross-section which substantially conforms in shape to the shape ofthe target portion. In an embodiment, the cross-section of the space hasan area which is less than 1.5 times the area of the target portion. Inan embodiment, the surface of the liquid confinement structure extendsbeyond a bottom surface closest to the substrate of the element, and, ina plane which intersects both the space and the element and which issubstantially parallel to the substrate, the cross-sectional shapes andareas of the space and element closely conform.

In an embodiment, there is provided a lithographic apparatus,comprising: a substrate table constructed to hold a substrate; aprojection system configured to project a patterned radiation beam ontoa target portion of the substrate; and a liquid confinement structurehaving a surface at least in part defining a space configured to containliquid between the projection system and the substrate, wherein in aplane substantially parallel to the substrate, at a position closest tothe substrate, the space has a cross-section which substantiallyconforms in shape, area, or both to that of the target portion.

In an embodiment, the cross-section of the space has an area which isless than 1.5 times the area of the target portion. In an embodiment, ina plane substantially parallel to the substrate and which intersectsboth the space and a final element of the projection system, theperiphery of the cross-section of the final element is substantiallyevenly surrounded by the periphery of the cross-section of the space. Inan embodiment, a final element of the projection system has across-section in a plane substantially parallel to the substrate whichsubstantially conforms in shape to the shape of the target portion, thecross-section of the space, or both. In an embodiment, the targetportion is substantially rectangular.

In an embodiment, there is provided a lithographic apparatus,comprising: a substrate table constructed to hold a substrate; aprojection system configured to project a patterned radiation beam ontoa target portion of the substrate; and a liquid confinement structurehaving a surface at least in part defining a space configured to containliquid between the substrate and an element of the projection systemimmediately adjacent the substrate, wherein in a plane substantiallyparallel to the substrate an area, a shape, or both of the cross-sectionof the element, of the space, or both, substantially conform(s) to thatof the target portion.

In an embodiment, the space is tapered such that the cross-sectionalarea of the space in a plane substantially parallel to the substratereduces as the substrate is approached. In an embodiment, thecross-sectional shape of the space in a plane substantially parallel tothe substrate changes from a position furthest from the substrate to aposition closest to the substrate, wherein at the position closest tothe substrate the cross-sectional shape is substantially the same as theshape of the target portion.

In an embodiment, there is provided a device manufacturing methodcomprising using a projection system to project on a target portion of asubstrate a patterned beam of radiation, wherein an element of theprojection system immediately adjacent the substrate has across-sectional shape in a plane substantially parallel to the substratewhich is rectilinear.

In an embodiment, there is provided a device manufacturing methodcomprising using a projection system to project on a target portion of asubstrate a patterned beam of radiation, wherein a space configured tobe filled with liquid between the projection system and the substrate isdefined at least in part by a surface of a liquid confinement structureand wherein in a plane substantially parallel to the substrate at aposition closest to the substrate the space has a cross-section whichsubstantially conforms in shape, area, or both to that of the targetportion.

In an embodiment, there is provided a device manufacturing methodcomprising using a projection system to project on a target portion of asubstrate a patterned beam of radiation, wherein a liquid is provided ina space between the projection system and the substrate and which spaceis defined at least in part by a surface of a liquid confinementstructure and the space, an element of the projection system immediatelyadjacent the substrate, or both, has a cross-section in a planesubstantially parallel to the substrate which conforms closely in size,shape, or both to that of the target portion.

Although specific reference may be made in this text to the use oflithographic apparatus in the manufacture of ICs, it should beunderstood that the lithographic apparatus described herein may haveother applications, such as the manufacture of integrated opticalsystems, guidance and detection patterns for magnetic domain memories,flat-panel displays, liquid-crystal displays (LCDs), thin-film magneticheads, etc. The skilled artisan will appreciate that, in the context ofsuch alternative applications, any use of the terms “wafer” or “die”herein may be considered as synonymous with the more general terms“substrate” or “target portion”, respectively. The substrate referred toherein may be processed, before or after exposure, in for example atrack (a tool that typically applies a layer of resist to a substrateand develops the exposed resist), a metrology tool and/or an inspectiontool. Where applicable, the disclosure herein may be applied to such andother substrate processing tools. Further, the substrate may beprocessed more than once, for example in order to create a multi-layerIC, so that the term substrate used herein may also refer to a substratethat already contains multiple processed layers.

Although specific reference may have been made above to the use ofembodiments of the invention in the context of optical lithography, itwill be appreciated that the invention may be used in otherapplications, for example imprint lithography, and where the contextallows, is not limited to optical lithography. In imprint lithographytopography in a patterning device defines the pattern created on asubstrate. The topography of the patterning device may be pressed into alayer of resist supplied to the substrate whereupon the resist is curedby applying electromagnetic radiation, heat, pressure or a combinationthereof. The patterning device is moved out of the resist leaving apattern in it after the resist is cured.

The terms “radiation” and “beam” used herein encompass all types ofelectromagnetic radiation, including ultraviolet (UV) radiation (e.g.having a wavelength of or about 365, 248, 193, 157 or 126 nm) andextreme ultra-violet (EUV) radiation (e.g. having a wavelength in therange of 5-20 nm), as well as particle beams, such as ion beams orelectron beams.

The term “lens”, where the context allows, may refer to any one orcombination of various types of optical components, includingrefractive, reflective, magnetic, electromagnetic and electrostaticoptical components.

While specific embodiments of the invention have been described above,it will be appreciated that the invention may be practiced otherwisethan as described. For example, the invention may take the form of acomputer program containing one or more sequences of machine-readableinstructions describing a method as disclosed above, or a data storagemedium (e.g. semiconductor memory, magnetic or optical disk) having sucha computer program stored therein.

One or more embodiments of the invention may be applied to any immersionlithography apparatus, in particular, but not exclusively, those typesmentioned above and whether the immersion liquid is provided in the formof a bath or only on a localized surface area of the substrate. A liquidsupply system as contemplated herein should be broadly construed. Incertain embodiments, it may be a mechanism or combination of structuresthat provides a liquid to a space between the projection system and thesubstrate and/or substrate table. It may comprise a combination of oneor more structures, one or more liquid inlets, one or more gas inlets,one or more gas outlets, and/or one or more liquid outlets that provideliquid to the space. In an embodiment, a surface of the space may be aportion of the substrate and/or substrate table, or a surface of thespace may completely cover a surface of the substrate and/or substratetable, or the space may envelop the substrate and/or substrate table.The liquid supply system may optionally further include one or moreelements to control the position, quantity, quality, shape, flow rate orany other features of the liquid.

The descriptions above are intended to be illustrative, not limiting.Thus, it will be apparent to one skilled in the art that modificationsmay be made to the invention as described without departing from thescope of the claims set out below.

The invention claimed is:
 1. A lithographic apparatus, comprising: a substrate table constructed to hold a substrate; a projection system configured to project a patterned radiation beam onto a target portion of the substrate, the target portion not centered under the middle of the projection system; and a liquid confinement structure having a surface at least in part defining a space configured to contain liquid between the substrate and an optical element of the projection system immediately adjacent the substrate, wherein a lower end of the optical element has a cross-section that substantially conforms to the target portion that is not centered under the middle of the projection system, and wherein the bottom surface of the optical element protrudes towards the substrate relative to an upper portion of the optical element.
 2. The apparatus according to claim 1, wherein the optical element is tapered such that the cross-sectional area of the optical element in a plane essentially parallel to the substrate reduces as the substrate is approached.
 3. The apparatus according to claim 1, wherein the cross-sectional shape of the optical element in a plane essentially parallel to the substrate changes from a position furthest from the substrate to a position closest to the substrate, wherein at the position closest to the substrate the cross-sectional shape is substantially the same as the shape of the target portion.
 4. A device manufacturing method comprising using the lithographic apparatus according to claim 1 to project on a target portion of a substrate a patterned beam of radiation.
 5. The lithographic apparatus according to claim 1, wherein the projection system is an off-axis projection system having the target portion decentered from an optical axis of the projection system.
 6. The lithographic apparatus according to claim 5, wherein the lower end of the optical element is decentered from the optical axis of the projection system.
 7. The lithographic apparatus according to claim 1, wherein the projection system is an off-axis, catadioptric projection system.
 8. The lithographic apparatus according to claim 1, wherein the target portion is essentially rectangular.
 9. A projection system configured to project a patterned radiation beam onto a target portion of a substrate through a liquid, the projection system comprising: an optical element immediately adjacent the substrate, wherein a bottom surface of the optical element adjacent the substrate has a cross-sectional shape that substantially conforms in shape to the shape of the target portion, wherein the target portion is not, in plan, centered under the middle of the projection system, and wherein the bottom surface of the optical element protrudes towards the substrate relative to an upper portion of the optical element.
 10. The projection system according to claim 9, wherein the projection system is an off-axis projection system.
 11. The projection system according to claim 10, wherein the off-axis projection system has the target portion decentered from an optical axis of the projection system.
 12. The projection system according to claim 11, wherein the bottom surface is decentered from the optical axis of the projection system.
 13. The projection system according to claim 9, wherein the bottom surface has a rectilinear shape.
 14. The projection system according to claim 13, wherein the bottom surface has a rectangular shape.
 15. The projection system according to claim 9, wherein the projection system is configured to project the patterned radiation beam onto the target portion with demagnification.
 16. The projection system according to claim 9, wherein the projection system is an off-axis, catadioptric projection system.
 17. The projection system according to claim 9, wherein the bottom surface is flat.
 18. The projection system according to claim 9, wherein the optical element is tapered such that the cross-sectional area of the optical element in a plane substantially parallel to the substrate reduces as the substrate is approached.
 19. A lithographic apparatus comprising: the projection system according to claim 9 to project a patterned radiation beam onto a target portion of a substrate, wherein the patterned radiation beam is based on illumination light from an illumination system.
 20. The lithographic apparatus according to claim 19, configured to project the patterned radiation beam onto the target portion while the position of the substrate is scanned.
 21. The lithographic apparatus according to claim 19 further comprising: a localized liquid supply system configured to provide the liquid.
 22. A device manufacturing method comprising: using the projection system according to claim 9 to project on a target portion of a substrate a patterned beam of radiation to expose a resist on the substrate; and developing the exposed resist.
 23. The device manufacturing method according to claim 22, wherein the patterned radiation beam is projected onto the target portion while the position of the substrate is scanned.
 24. A projection system configured to project a patterned radiation beam onto a target portion of a substrate through a liquid, the projection system comprising: an optical element immediately adjacent the substrate, wherein a bottom surface of the optical element adjacent the substrate has a cross-sectional shape that substantially conforms in shape to the shape of the target portion, wherein the projection system is an off-axis projection system having the target portion not, in plan, centered under the middle of the projection system, wherein the bottom surface of the optical element is decentered from an optical axis of the projection system, wherein the projection system is a catadioptric projection system, and wherein the bottom surface of the optical element protrudes towards the substrate relative to an upper portion of the optical element.
 25. The projection system according to claim 24, wherein the bottom surface has a rectilinear shape.
 26. The projection system according to claim 24, wherein the optical element is tapered such that the cross-sectional area of the optical element in a plane essentially parallel to the substrate reduces as the substrate is approached.
 27. The projection system according to claim 24, wherein the optical element comprises tapered side surfaces extending from the upper portion of the optical element to the bottom surface of the optical element.
 28. The projection system according to claim 27, wherein the optical element has a cross-sectional area parallel to the substrate that reduces as the substrate is approached.
 29. The projection system according to claim 28, wherein the bottom surface has a rectilinear shape.
 30. The projection system according to claim 28, wherein the bottom surface is planar.
 31. An exposure apparatus comprising: the projection system according to claim 24 for projecting an image of a predetermined pattern onto a photosensitive substrate that is set on the second plane based on illumination light from the pattern set on the first plane; and a supply and discharge mechanism for supplying and discharging the liquid.
 32. The exposure apparatus according to claim 31, wherein the pattern is projected while changing a positional relationship of the image of the pattern and the photosensitive substrate in a scanning direction.
 33. A device manufacturing method comprising: an exposure step of projecting and exposing an image of a pattern set on the first plane onto a photosensitive substrate set on the second plane with the projection system according to claim 24; and a development step of developing the photosensitive substrate that has undergone the exposure step.
 34. A projection system configured to project a patterned radiation beam onto a target portion of a substrate through a liquid, the projection system comprising: an optical element immediately adjacent the substrate and contacting the liquid, wherein a bottom surface of the optical element adjacent the substrate has a cross-sectional shape that substantially conforms in shape to the shape of the target portion, wherein the projection system has the target portion not, in plan, centered under the middle of the projection system, wherein the bottom surface of the optical element is decentered from the optical axis of the projection system, and wherein the bottom surface of the optical element protrudes towards the substrate relative to an upper portion of the optical element.
 35. The projection system according to claim 34, wherein the bottom surface has a rectilinear shape.
 36. The projection system according to claim 34, wherein the optical element is tapered such that the cross-sectional area of the optical element in a plane essentially parallel to the substrate reduces as the substrate is approached.
 37. The projection system according to claim 34, wherein the optical element comprises tapered side surfaces extending from the upper portion of the optical element to the protruding bottom surface of the optical element.
 38. The projection system according to claim 37, wherein the optical element has a cross-sectional area parallel to the substrate that reduces as the substrate is approached.
 39. The projection system according to claim 34, wherein a periphery of the upper portion of the optical element surrounds the protruding bottom surface from above.
 40. The projection system according to claim 34, wherein the projection system is a catadioptric projection system.
 41. The projection system according to claim 34, wherein the projection system projects the patterned radiation beam onto the target portion with demagnification.
 42. An exposure apparatus comprising: the projection system according to claim 34 for projecting an image of a predetermined pattern onto a photosensitive substrate that is set on the second plane based on illumination light from the pattern set on the first plane; and a supply and discharge mechanism for supplying and discharging the liquid.
 43. The exposure apparatus according to claim 42, wherein the pattern is projected while changing a positional relationship of the image of the pattern and the photosensitive substrate in a scanning direction.
 44. A device manufacturing method comprising: an exposure step of projecting and exposing an image of a pattern set on the first plane onto a photosensitive substrate set on the second plane with the projection system according to claim 34; and a development step of developing the photosensitive substrate that has undergone the exposure step.
 45. A lithographic apparatus comprising: a substrate table constructed to hold a substrate; a projection system configured to project a patterned radiation beam onto a target portion of the substrate through a liquid in a direction of an optical axis; a positioner coupled to the substrate table and configured to scan the substrate relative to the patterned radiation along a direction perpendicular to the optical axis; wherein the projection system comprises an optical element immediately adjacent the substrate and contacting the liquid, wherein a bottom surface of the optical element adjacent the substrate has a cross-sectional shape that substantially conforms in shape to the shape of the target portion, wherein the projection system is an off-axis projection system having the target portion not, in plan, centered under the middle of the projection system, wherein the bottom surface of the optical element is decentered from the optical axis of the projection system, and wherein the bottom surface of the optical element protrudes towards the substrate relative to an upper portion of the optical element.
 46. The lithographic apparatus according to claim 45, wherein the bottom surface has a rectilinear shape.
 47. The lithographic apparatus according to claim 45, wherein the optical element is tapered such that the cross-sectional area of the optical element in a plane essentially parallel to the substrate reduces as the substrate is approached.
 48. The lithographic apparatus according to claim 45, wherein the optical element comprises tapered side surfaces extending from the upper portion of the optical element to the protruding bottom surface of the optical element.
 49. The lithographic apparatus according to claim 48, wherein the optical element has a cross-sectional area parallel to the substrate that reduces as the substrate is approached.
 50. The lithographic apparatus according to claim 45, wherein a periphery of the upper portion of the optical surrounds the protruding bottom surface from above.
 51. The lithographic apparatus according to claim 45, wherein the off-axis projection system is a catadioptric, off-axis projection system.
 52. The lithographic apparatus according to claim 45, wherein the projection system projects the patterned radiation beam onto the target portion with demagnification.
 53. A lithographic apparatus comprising: a substrate table constructed to hold a substrate; a projection system configured to project a patterned radiation beam onto a target portion of the substrate through a liquid; a positioner coupled to the substrate table and configured to scan the substrate relative to the patterned radiation along a direction perpendicular to an optical axis of the projection system; wherein the projection system comprises an optical element immediately adjacent the substrate and having a bottom surface adjacent the substrate that is arranged to contact the liquid, wherein the target portion is not centered under the middle of the projection system, wherein the bottom surface of the optical element is decentered from the optical axis of the projection system, and wherein the bottom surface of the optical element is formed in a lower portion of the optical element that protrudes towards the substrate relative to an upper portion of the optical element.
 54. The lithographic apparatus according to claim 53, wherein the bottom surface has a rectilinear shape.
 55. The lithographic apparatus according to claim 53, further comprising a downward-facing surface located above the bottom surface.
 56. The lithographic apparatus according to claim 55, wherein the optical element has a surface which extends upwardly and radially from the bottom surface.
 57. The lithographic apparatus according to claim 56, wherein the surface which extends upwardly and radially from the bottom surface is located between the bottom surface and the downward-facing surface.
 58. The lithographic apparatus according to claim 53, wherein the optical element is tapered such that a cross-sectional area of at least part of the optical element in a plane essentially parallel to the substrate reduces as the substrate is approached.
 59. The lithographic apparatus according to claim 53, wherein a periphery of the upper portion of the optical element surrounds the lower surface from above.
 60. The lithographic apparatus according to claim 53, wherein the projection system is an off-axis, catadioptric projection system.
 61. The lithographic apparatus according to claim 53, wherein the refractive optical element is arranged so that a center of a light entering surface of the optical element is substantially centered with the optical axis.
 62. The lithographic apparatus according to claim 53, wherein a width of the protruding portion with respect to a first direction is narrower than a width of the protruding portion with respect to a second direction perpendicular to the optical axis and the first direction.
 63. The lithographic apparatus according to claim 53, wherein the bottom surface crosses the optical axis.
 64. A projection system configured to project a patterned radiation beam onto a target portion of a substrate through a liquid, the projection system comprising: an optical element immediately adjacent the substrate and having a bottom surface arranged to contact the liquid, wherein the target portion is not centered under the middle of the projection system, wherein the bottom surface of the optical element is decentered from an optical axis of the projection system, and wherein the bottom surface of the optical element is formed in a lower portion of the optical element that protrudes towards the substrate relative to an upper portion of the optical element.
 65. The lithographic apparatus according to claim 64, wherein the bottom surface has a rectilinear shape.
 66. The lithographic apparatus according to claim 64, further comprising a downward-facing surface located above the bottom surface.
 67. The lithographic apparatus according to claim 66, wherein the optical element has a surface which extends upwardly and radially from the bottom surface.
 68. The lithographic apparatus according to claim 67, wherein the surface which extends upwardly and radially from the bottom surface is located between the bottom surface and the downward-facing surface.
 69. The lithographic apparatus according to claim 64, wherein the optical element is tapered such that a cross-sectional area of at least part of the optical element in a plane essentially parallel to the substrate reduces as the substrate is approached.
 70. The lithographic apparatus according to claim 64, wherein a periphery of the upper portion of the optical element surrounds the lower surface from above.
 71. The lithographic apparatus according to claim 64, wherein the projection system is an off-axis, catadioptric projection system.
 72. The lithographic apparatus according to claim 64, wherein the refractive optical element is arranged so that a center of a light entering surface of the optical element is substantially centered with the optical axis.
 73. The lithographic apparatus according to claim 64, wherein a width of the protruding portion with respect to a first direction is narrower than a width of the protruding portion with respect to a second direction perpendicular to the optical axis and the first direction.
 74. The lithographic apparatus according to claim 64, wherein the bottom surface crosses the optical axis. 